bd239c BD240C complementary silicon power transistors n bd239c is st preferred salestype description the bd239c is a silicon epitaxial-base npn transistor mounted in jedec to-220 plastic package. it is inteded for use in medium power linear and switching applications. the pnp complementary type is BD240C. ? internal schematic diagram august 1998 1 2 3 to-220 absolute maximum ratings symbol parameter value unit npn bd239c unit pnp BD240C unit v cer collector-emitter voltage (r be = 100 w )115v v ceo collector-emitter voltage (i b = 0) 100 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 2 a i cm collector peak current 4 a i b base current 0.6 a p tot total dissipation at t c 25 o c30w p tot total dissipation at t amb 25 o c2w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c for pnp types voltage and current values are negative. 1/4
thermal data r thj-case r thj-amb thermal resistance junction-case max thermal resistance junction-ambient max 4.17 62.5 o c/w o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be = 0) v ce = 100 v 0.2 ma i ceo collector cut-off current (i b = 0) v ce = 60 v 0.3 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage i c = 30 ma 100 v v ce(sat) * collector-emitter saturation voltage i c = 1 a i b = 0.2 a 0.7 v v be * base-emitter voltage i c = 1 a v ce = 4 v 1.3 v h fe * dc current gain i c = 0.2 a v ce = 4 v i c = 1 a v ce = 4 v 40 15 h fe small signal current gain i c = 0.2 a v ce = 10 v f = 1mhz i c = 0.2 a v ce = 10 v f = 1khz 3 20 * pulsed: pulse duration = 300 m s, duty cycle 2 % for pnp types voltage and current values are negative. safe operating areas bd239c/BD240C 2/4
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data bd239c/BD240C 3/4
information furnished is believed to be accurate and reliable. however, stmicroe lectronics assumes no responsibi lity for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or pat ent rights of stm icroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previou sly supplied. stmicroele ctron ics products are not authorized for use as critical components in life support devices or systems without e xpress written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectro nics ? 1998 stmicroelectronics C printed in italy C all rights reserved stmicroelectronics group of comp anies australia - brazil - canada - china - france - germany - italy - japan - k orea - m alaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . bd239c/BD240C 4/4
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